GaN on Silicon Power Devices feature JEDEC qualification.

Based on EZ-GaN™ technology, 600 V Total GaN™ TPH3006PS HEMT comes in TO-220 package with low on-state resistance of 150 mΩ and low reverse-recovery charge of 54 nC. Also available in industry-standard TO-220 packages, TPS3410PK and TPS3411PK GaN diodes offer 6 A and 4 A operating currents, respectively, with forward voltage of 1.3 V. Applications include power supplies and adapters, PV inverters, motor drives, and power conversion for electric vehicles.

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[source: http://news.thomasnet.com/fullstory/GaN-on-Silicon-Power-Devices-feature-JEDEC-qualification-20004878]

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